国家/地区 Japan（11）
关键词 HBN（11）
出版物 SURFACE REVIEW LETT.（3） APPLIED PHYSICS EXP.（2）
出版时间 2020（3） 2003（2） 2012（2）
机构 WASEDA UNIV（3）
作者 OSHIMA C（3） HIBINO H（2） ROKUTA E（2） TANAKA T（2）

Asymmetric carrier penetration into hexagonal boron nitride in graphene field-effect transistors

APPLIED PHYSICS EXPRESS

OKADA S, MARUYAMA M, GAO YL

Cyclotron Resonance Study of Monolayer Graphene under Double Moire Potentials

NANO LETTERS

ONODERA M, KINOSHITA K, MORIYA R, MASUBUCHI S, WATANABE K, TANIGUCHI T, MACHIDA T

Controlled CVD growth of lateral and vertical graphene/h-BN heterostructures

APPLIED PHYSICS EXPRESS

MAKINO R, MIZUNO S, KAGESHIMA H, HIBINO H

Growth of graphene on SiO2 with hexagonal boron nitride buffer layer

APPLIED SURFACE SCIENCE

ENTANI S, TAKIZAWA M, LI ST, NARAMOTO H, SAKAI S

I-V characteristics of graphene nanoribbon/h-BN heterojunctions and resonant tunneling

JOURNAL OF PHYSICSCONDENSED MATTER

WAKAI T, SAKAMOTO S, TOMIYA M

Electronic Properties of Graphene/h-BN Bilayer Superlattices

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN

SAKAI Y, SAITO S

Chemical vapor deposition of boron- and nitrogen-containing graphene thin films

MATERIALS SCIENCE ENGINEERING BADVANCED FUNCTIONAL SOLIDSTATE MATERIALS

SUZUKI S, HIBINO H

Heteroepitaxial film of monolayer graphene/monolayer h-BN on Ni(111)

SURFACE REVIEW LETTERS

TANAKA T, ITO A, TAJIMA A, ROKUTA E, OSHIMA C

Heteroepitaxial system of h-BN/monolayer graphene on Ni(111)

SURFACE REVIEW LETTERS

TANAKA T, ITOH A, YAMASHITA K, ROKUTA E, OSHIMA C

Double atomic layers of graphene/monolayer h-BN on Ni(111) studied by scanning tunneling microscopy and scanning tunneling spectroscopy

SURFACE REVIEW LETTERS

KAWASAKI T, ICHIMURA T, KISHIMOTO H, AKBAR AA, OGAWA T, OSHIMA C