国家/地区 Usa（2）
关键词 INSULATED GATE FIELD EFFECT TRANSISTOR（2）
出版物
出版时间 2010（2）
机构
作者

Wafer-scale epitaxial graphene growth on the Si-face of hexagonal SiC (0001) for high frequency transistors

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

DIMITRAKOPOULOS C, LIN YM, GRILL A, FARMER DB, FREITAG M, SUN YN, HAN SJ, CHEN ZH, JENKINS KA, ZHU Y, LIU ZH, MCARDLE TJ, OTT JA, WISNIEFF R, AVOURIS P

Characteristics of high-k Al2O3 dielectric using ozone-based atomic layer deposition for dual-gated graphene devices

APPLIED PHYSICS LETTERS

LEE B, MORDI G, KIM MJ, CHABAL YJ, VOGEL EM, WALLACE RM, CHO KJ, COLOMBO L, KIM J