国家/地区 Korea（4）
关键词 MEMORY DEVICE（4）
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出版时间
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Characteristics of Reduced Graphene Oxide Quantum Dots for a Flexible Memory Thin Film Transistor

ACS APPLIED MATERIALS INTERFACES

KIM YH, LEE EY, LEE HH, SEO TS

Resistive switching memory device with metal-oxide quantum dots on a graphene layer

PHYSICA STATUS SOLIDI AAPPLICATIONS MATERIALS SCIENCE

LEE DU, QIU D, KIM EK

Flexible Graphene-Channel Memory Devices: A Review

ACS APPLIED NANO MATERIALS

SATTARIESFAHLAN SM, KIM CH

Gate-Deterministic Remote Doping Enables Highly Retentive Graphene-MXene Hybrid Memory Devices on Plastic

ADVANCED FUNCTIONAL MATERIALS

KIM S, JO SB, KIM J, RHEE D, CHOI YY, KIM DH, KANG J, CHO JH