国家/地区 Russia（3）
关键词 MEMRISTOR（7）
出版物
出版时间 2020（7）
机构
作者

Large-scalable graphene oxide films with resistive switching for non-volatile memory applications

JOURNAL OF ALLOYS COMPOUNDS

BRZHEZINSKAYA M, KAPITANOVA OO, KONONENKO OV, KOVESHNIKOV S, KOREPANOV V, ROSHCHUPKIN D

Compacted Self-Assembly Graphene with Hydrogen Plasma Surface Modification for Robust Artificial Electronic Synapses of Gadolinium Oxide Memristors

ADVANCED MATERIALS INTERFACES

CHAN YT, FU Y, YU L, WU FY, WANG HW, LIN TH, CHAN SH, WU MC, WANG JC

A Memristive Model for Graphene Emitters: Hysteresis and Self-Crossing

PHYSICA STATUS SOLIDI BBASIC SOLID STATE PHYSICS

GORODETSKIY DV, SHEVCHENKO SN, GUSEL NIKOV AV, OKOTRUB AV

Fluorinated graphene nanoparticles with 1-3 nm electrically active graphene quantum dots

NANOTECHNOLOGY

NEBOGATIKOVA NA, ANTONOVA IV, IVANOV AI, DEMIN VA, KVASHNIN DG, OLEJNICZAK A, GUTAKOVSKII AK, KORNIEIEVA KA, RENAULT PLJ, SKURATOV VA, CHERNOZATONSKII LA

Modelling the switching effect in graphene oxide-based memristors

SEMICONDUCTOR SCIENCE TECHNOLOGY

VERCIK A, VERCIK LCD

Memristive Non-Volatile Memory Based on Graphene Materials

MICROMACHINES

SHEN ZJ, ZHAO C, QI YF, MITROVIC IZ, YANG L, WEN JC, HUANG YB, LI PZ, ZHAO CZ

Resistive Switching in Graphene Oxide

FRONTIERS IN MATERIALS

ROMERO FJ, TORAL A, MEDINARULL A, MORAILAMARTINEZ CL, MORALES DP, OHATA A, GODOY A, RUIZ FG, RODRIGUEZ N