国家/地区 Italy（2） Spain（2）
关键词 MODELING（7）
出版物 IEEE TRANSACTIONS ON ELECTRON DEVICES（7）
出版时间 2011（2） 2013（2）
机构 UNIV AUTONOM.（2） UNIV UDINE（2）
作者 DRIUSSI F（2） JIMENEZ D（2） PALESTRI P（2） SELMI L（2）
VAZIRI S（2） VENICA S（2）

Simulation of DC and RF Performance of the Graphene Base Transistor

IEEE TRANSACTIONS ON ELECTRON DEVICES

VENICA S, DRIUSSI F, PALESTRI P, ESSENI D, VAZIRI S, SELMI L

Quasi-Ballistic Transport Model for Graphene Field-Effect Transistor

IEEE TRANSACTIONS ON ELECTRON DEVICES

HU GX, HU SY, LIU R, WANG LL, ZHOU X, TANG TA

Small-Signal Capacitance and Current Parameter Modeling in Large-Scale High-Frequency Graphene Field-Effect Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

ZEBREV GI, TSELYKOVSKIY AA, BATMANOVA DK, MELNIK EV

Explicit Drain Current, Charge and Capacitance Model of Graphene Field-Effect Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

JIMENEZ D

Explicit Drain-Current Model of Graphene Field-Effect Transistors Targeting Analog and Radio-Frequency Applications

IEEE TRANSACTIONS ON ELECTRON DEVICES

JIMENEZ D, MOLDOVAN O

Compact Physics-Based Circuit Models for Graphene Nanoribbon Interconnects

IEEE TRANSACTIONS ON ELECTRON DEVICES

NAEEMI A, MEINDL JD

Graphene Base Transistors With Bilayer Tunnel Barriers: Performance Evaluation and Design Guidelines

IEEE TRANSACTIONS ON ELECTRON DEVICES

VENICA S, DRIUSSI F, VAZIRI S, PALESTRI P, SELMI L