国家/地区 Japan（5）
关键词 MOLECULAR BEAM EPITAXY（5）
出版物 JOURNAL OF CRYSTAL .（2） NANOTECHNOLOGY（2）
出版时间
机构
作者 KISHINO K（3） FIMLAND BO（2） VULLUM PE（2） WEMAN H（2）

Vertical GaN nanocolumns grown on graphene intermediated with a thin AlN buffer layer

NANOTECHNOLOGY

LIUDI MULYO A, RAJPALKE MK, KUROE H, VULLUM PE, WEMAN H, FIMLAND BO, KISHINO K

Selective growth of (001) GaAs using a patterned graphene mask

JOURNAL OF CRYSTAL GROWTH

HIROTA Y, SHIRAI Y, IHA H, KITO Y, SUZUKI M, KATO H, YAMAMOTO N, MARUYAMA T, NARITSUKA S

Molecular beam epitaxial growth of graphene using cracked ethylene

JOURNAL OF CRYSTAL GROWTH

MAEDA F, HIBINO H

Self-organization of dislocation-free, high-density, vertically aligned GaN nanocolumns involving InGaN quantum wells on graphene/SiO2 covered with a thin AlN buffer layer

NANOTECHNOLOGY

HAYASHI H, KONNO Y, KISHINO K

Graphene-Based Transparent Conducting Substrates for GaN/AlGaN Nanocolumn Flip-Chip Ultraviolet Light-Emitting Diodes

ACS APPLIED NANO MATERIALS

MULYO AL, MUKHERJEE A, HOIAAS IM, AHTAPODOV L, NILSEN TA, TOFTEVAAG HH, VULLUM PE, KISHINO K, WEMAN H, FIMLAND BO