国家/地区
关键词 MOLECULAR BEAM EPITAXY（6）
出版物 NANOTECHNOLOGY（2）
出版时间 2019（6）
机构
作者

Spontaneous intercalation of Ga and In bilayers during plasma-assisted molecular beam epitaxy growth of GaN on graphene on SiC

NANOTECHNOLOGY

FELDBERG N, KLYMOV O, GARRO N, CROS A, MOLLARD N, OKUNO H, GRUART M, DAUDIN B

A Study of GaAs1-xSbx Axial Nanowires Grown on Monolayer Graphene by Ga-Assisted Molecular Beam Epitaxy for Flexible Near-Infrared Photodetectors

ACS APPLIED NANO MATERIALS

NALAMATI S, SHARMA M, DESHMUKH P, KRONZ J, LAVELLE R, SNYDER D, REYNOLDS CL, LIU Y, IYER S

Study on AlN buffer layer for GaN on graphene/copper sheet grown by MBE at low growth temperature

JOURNAL OF ALLOYS COMPOUNDS

YU JD, HAO ZB, WANG J, DENG J, YU WY, WANG L, LUO Y, HAN YJ, SUN CZ, XIONG B, LI HT

Enhancement of InN Luminescence by Introduction of Graphene Interlayer

NANOMATERIALS

DOBROVOLSKAS D, ARAKAWA S, MOURI S, ARAKI T, NANISHI Y, MICKEVICIUS J, TAMULAITIS G

Vertical GaN nanocolumns grown on graphene intermediated with a thin AlN buffer layer

NANOTECHNOLOGY

LIUDI MULYO A, RAJPALKE MK, KUROE H, VULLUM PE, WEMAN H, FIMLAND BO, KISHINO K

Narrow photoluminescence and Raman peaks of epitaxial MoS2 on graphene/Ir(111)

2D MATERIALS

EHLEN N, HALL J, SENKOVSKIY BV, HELL M, LI J, HERMAN A, SMIRNOV D, FEDOROV A, VOROSHNIN VY, DI SANTO G, PETACCIA L, MICHELY T, GRUNEIS A