国家/地区 Iran（3）
关键词 NEGF（3）
出版物
出版时间 2013（2）
机构 ISLAMIC AZAD UNIV（3）
作者 GHOREISHI SS（2）

A Functional Study of a Bilayer Graphene Nanoribbon FET With Four Different Gate Insulators

IEEE TRANSACTIONS ON NANOTECHNOLOGY

NAZARI A, SHAMLOO H, FAEZ R, HAJINASIRI S

A NOVEL GRAPHENE NANO-RIBBON FIELD EFFECT TRANSISTOR WITH SCHOTTKY TUNNELING DRAIN AND OHMIC TUNNELING SOURCE

MODERN PHYSICS LETTERS B

GHOREISHI SS, SAGHAFI K, MORAVVEJFARSHI MK

A computational study on electrical characteristics of a novel band-to-band tunneling graphene nanoribbon FET

SUPERLATTICES MICROSTRUCTURES

YOUSEFI R, SHABANI M, ARJMANDI M, GHOREISHI SS