国家/地区
关键词 NONVOLATILE MEMORY（2）
出版物
出版时间 2015（2）
机构
作者 KIM TW（2）

Solution-Processed, Flexible, and Transparent Non-Volatile Memory With Embedded Graphene Quantum Dots in Polymethylsilsesquioxane Layers

IEEE ELECTRON DEVICE LETTERS

LIN J, OOI PC, LI FS, GUO TL, KIM TW

Resistive switching characteristics of ZnO-graphene quantum dots and their use as an active component of an organic memory cell with one diode-one resistor architecture

ORGANIC ELECTRONICS

JI Y, LEE SA, CHA AN, GOH M, BAE S, LEE S, SON DI, KIM TW