国家/地区 China（2）
关键词 NONVOLATILE MEMORY（2）
出版物 ADVANCED ELECTRONIC MATERIALS（2）
出版时间
机构
作者

Polyoxometalates-Modulated Reduced Graphene Oxide Flash Memory with Ambipolar Trapping as Bidirectional Artificial Synapse

ADVANCED ELECTRONIC MATERIALS

CHEN XL, PAN JY, FU JJ, ZHU X, ZHANG C, ZHOU L, WANG Y, LV ZY, ZHOU Y, HAN ST

Graphene and Related Materials for Resistive Random Access Memories

ADVANCED ELECTRONIC MATERIALS

HUI F, GRUSTANGUTIERREZ E, LONG SB, LIU Q, OTT AK, FERRARI AC, LANZA M