国家/地区 Korea（3）
关键词 NONVOLATILE MEMORY DEVICE（5）
出版物 ORGANIC ELECTRONICS（2）
出版时间 2015（2）
机构 HANYANG UNIV（2）
作者 KIM TW（2）

Graphene/lead-zirconate-titanate ferroelectric memory devices with tenacious retention characteristics

CARBON

LEE S, LEE Y

High Performance Organic Nonvolatile Flash Memory Transistors with High-Resolution Reduced Graphene Oxide Patterns as a Floating Gate

ACS APPLIED MATERIALS INTERFACES

CHUNG DS, LEE SM, BACK JY, KWON SK, KIM YH, CHANG ST

Indium-tin-oxide, free, flexible, nonvolatile memory devices based on graphene quantum dots sandwiched between polymethylsilsesquioxane layers

ORGANIC ELECTRONICS

OOI PC, LIN J, KIM TW, LI FS

Graphene oxide (GO)/reduced-GO and their composite with conducting polymer nanostructure thin films for non-volatile memory device

MICROELECTRONIC ENGINEERING

RAY SC, BHUNIA SK, SAHA A, JANA NR

Multilevel characteristics and operating mechanisms of nonvolatile memory devices based on a floating gate of graphene oxide sheets sandwiched between two polystyrene layers

ORGANIC ELECTRONICS

KIM YN, LEE NH, YUN DY, KIM TW