国家/地区 Korea（3）
关键词 NONVOLATILE MEMORY DEVICE（3）
出版物
出版时间
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作者

Graphene/lead-zirconate-titanate ferroelectric memory devices with tenacious retention characteristics

CARBON

LEE S, LEE Y

High Performance Organic Nonvolatile Flash Memory Transistors with High-Resolution Reduced Graphene Oxide Patterns as a Floating Gate

ACS APPLIED MATERIALS INTERFACES

CHUNG DS, LEE SM, BACK JY, KWON SK, KIM YH, CHANG ST

Multilevel characteristics and operating mechanisms of nonvolatile memory devices based on a floating gate of graphene oxide sheets sandwiched between two polystyrene layers

ORGANIC ELECTRONICS

KIM YN, LEE NH, YUN DY, KIM TW