国家/地区
关键词 NONVOLATILE MEMORY DEVICE（2）
出版物
出版时间 2015（2）
机构
作者

Graphene oxide (GO)/reduced-GO and their composite with conducting polymer nanostructure thin films for non-volatile memory device

MICROELECTRONIC ENGINEERING

RAY SC, BHUNIA SK, SAHA A, JANA NR

Multilevel characteristics and operating mechanisms of nonvolatile memory devices based on a floating gate of graphene oxide sheets sandwiched between two polystyrene layers

ORGANIC ELECTRONICS

KIM YN, LEE NH, YUN DY, KIM TW