国家/地区 Usa（4） Malaysia（2）
关键词 QUANTUM CAPACITANCE（12）
出版物 ACS APPLIED MATERIA.（2）
出版时间 2014（12）
机构 UNIV TEKNOL .（2）
作者 EBRISH MA（2） ISMAIL R（2） KOESTER SJ（2） OLSON EJ（2）

The Hall coefficient: a tool for characterizing graphene field effect transistors

2D MATERIALS

WEHRFRITZ P, SEYLLER T

Analytical study of subthreshold behaviour of double gate bilayer graphene field effect transistors

SEMICONDUCTOR SCIENCE TECHNOLOGY

SAEIDMANESH M, KHALEDIAN M, GHADIRY M, ISMAIL R

Quantum capacitance and Landau parameters of massless Dirac fermions in graphene

ANNALEN DER PHYSIK

ASGARI R, KATSNELSON MI, POLINI M

Large Capacitance Enhancement Induced by Metal-Doping in Graphene-Based Supercapacitors: A First-Principles-Based Assessment

ACS APPLIED MATERIALS INTERFACES

PAEK E, PAK AJ, HWANG GS

Effect of Noncovalent Basal Plane Functionalization on the Quantum Capacitance in Graphene

ACS APPLIED MATERIALS INTERFACES

EBRISH MA, OLSON EJ, KOESTER SJ

Voltage-dependent parameter extraction for graphene nanoribbon interconnect model through ab initio approach

THIN SOLID FILMS

YAMACLI S

Multilayer Graphene FET Compact Circuit-Level Model With Temperature Effects

IEEE TRANSACTIONS ON NANOTECHNOLOGY

UMOH IJ, KAZMIERSKI TJ, ALHASHIMI BM

Analytical development and optimization of a graphene-solution interface capacitance model

BEILSTEIN JOURNAL OF NANOTECHNOLOGY

KARIMI H, RAHMANI R, MASHAYEKHI R, RANJBARI L, SHIRDEL AH, HAGHIGHIAN N, MOVAHEDI P, HADIYAN M, ISMAIL R

Graphene-Based Quantum Capacitance Wireless Vapor Sensors

IEEE SENSORS JOURNAL

DEEN DA, OLSON EJ, EBRISH MA, KOESTER SJ

Boron Nitride-Graphene Nanocapacitor and the Origins of Anomalous Size-Dependent Increase of Capacitance

NANO LETTERS

SHI G, HANLUMYUANG Y, LIU Z, GONG YJ, GAO WL, LI B, KONO J, LOU J, VAJTAI R, SHARMA P, AJAYAN PM