国家/地区 Korea（3）
关键词 RESISTIVE RANDOM ACCESS MEMORY（3）
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Resistive switching behaviour of multi-stacked PVA/graphene oxide plus PVA composite/PVA insulating layer-based RRAM devices

SEMICONDUCTOR SCIENCE TECHNOLOGY

KIM T, KIM DK, KIM J, PAK JJ

Significantly-enhanced Stabilities in Flexible Hybrid Organic-Inorganic Perovskite Resistive Random Access Memories by Employing Multilayer Graphene Transparent Conductive Electrodes

JOURNAL OF THE KOREAN PHYSICAL SOCIETY

JANG CW, HWANG SW, SHIN SH, CHOI SH

Depth Gradient Reduced Graphene Oxide Layer via Intense Pulsed Light Annealing Process for the Flexible Resistive Random Access Memory Device

ADVANCED ELECTRONIC MATERIALS

PARK JW, MOON CJ, JU YM, JANG YR, PARK SS, KIM HS