国家/地区
关键词 RESISTIVE RANDOM ACCESS MEMORY（2）
出版物
出版时间 2017（2）
机构
作者

Model for multi-filamentary conduction in graphene/hexagonal-boron-nitride/graphene based resistive switching devices

2D MATERIALS

PAN CB, MIRANDA E, VILLENA MA, XIAO N, JING X, XIE XM, WU TR, HUI F, SHI YY, LANZA M

Resistive switching in graphene-organic device: Charge transport properties of graphene-organic device through electric field induced optical second harmonic generation and charge modulation spectroscopy

CARBON

JACOB MV, TAGUCHI D, IWAMOTO M, BAZAKA K, RAWAT RS