国家/地区 China（2）
关键词 RESISTIVE SWITCHING（7）
出版物 ADVANCED ELECTRONIC.（2）
出版时间 2017（7）
机构
作者

Multiple Physical Time Scales and Dead Time Rule in Few-Nanometers Sized Graphene-SiO&ITx&IT-Graphene Memristors

NANO LETTERS

POSA L, EL ABBASSI M, MAKK P, SANTA B, NEF C, CSONTOS M, CALAME M, HALBRITTER A

Bipolar resistive switching in PVDF and Graphene Oxide heterostructure thin films

JOURNAL OF ALLOYS COMPOUNDS

THAKRE A, KUMAR A

Resistive switching effect in the planar structure of all-printed, flexible and rewritable memory device based on advanced 2D nanocomposite of graphene quantum dots and white graphene flakes

JOURNAL OF PHYSICS DAPPLIED PHYSICS

REHMAN MM, SIDDIQUI GU, KIM S, CHOI KH

Graphene and Related Materials for Resistive Random Access Memories

ADVANCED ELECTRONIC MATERIALS

HUI F, GRUSTANGUTIERREZ E, LONG SB, LIU Q, OTT AK, FERRARI AC, LANZA M

Resistive Switching in ZnO Nanorods/Graphene Oxide Hybrid Multilayer Structures

ADVANCED ELECTRONIC MATERIALS

ANOOP G, PANWAR V, KIM TY, JO JY

Multilevel Ultrafast Flexible Nanoscale Nonvolatile Hybrid Graphene Oxide-Titanium Oxide Memories

ACS NANO

NAGAREDDY VK, BARNES MD, ZIPOL F, LAI KT, ALEXEEV AM, CRACIUN MF, WRIGHT CD

Graphene resistive random memory - the promising memory device in next generation

CHINESE PHYSICS B

WANG XF, ZHAO HM, YANG Y, REN TL