国家/地区 China（2）
关键词 RESISTIVE SWITCHING（2）
出版物 CHINESE PHYSICS B（2）
出版时间
机构
作者

Characteristic modification by inserted metal layer and interface graphene layer in ZnO-based resistive switching structures

CHINESE PHYSICS B

LIU HN, SUO XX, ZHANG LA, ZHANG D, WU HC, ZHAO HK, JIANG ZT, LI YL, WANG Z

Graphene resistive random memory - the promising memory device in next generation

CHINESE PHYSICS B

WANG XF, ZHAO HM, YANG Y, REN TL