国家/地区 China（2）
关键词 RESISTIVE SWITCHING MEMORY（2）
出版物
出版时间 2018（2）
机构
作者

Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects

ADVANCED MATERIALS

ZHAO XL, MA J, XIAO XH, LIU Q, SHAO L, CHEN D, LIU S, NIU JB, ZHANG XM, WANG Y, CAO RR, WANG W, DI ZF, LV HB, LONG SB, LIU M

Preparation of Graphene Oxide/Poly(1-vinylimidazole) Composites for Resistive Switching Memory

JOURNAL OF NANOSCIENCE NANOTECHNOLOGY

LIN JR, NI XY