国家/地区 Taiwan（4）
关键词 RRAM（4）
出版物
出版时间
机构
作者

Insertion of a Graphene Oxide Layer into a Cu/SiO2/Pt Structure to Overcome Performance Degradation in a Vaporless Environment

APPLIED SCIENCESBASEL

LIU CY, LAI CH, LIN CC, YANG CP

Retention behaviour of graphene oxide resistive switching memory

INTERNATIONAL JOURNAL OF NANOTECHNOLOGY

YUAN F, YE YR, LAI CS, WANG JC, ZHANG ZG, PAN LY, XU J

High performance of graphene oxide-doped silicon oxide-based resistance random access memory

NANOSCALE RESEARCH LETTERS

ZHANG R, CHANG KC, CHANG TC, TSAI TM, CHEN KH, LOU JC, CHEN JH, YOUNG TF, SHIH CC, YANG YL, PAN YC, CHU TJ, HUANG SY, PAN CH, SU YT, SYU YE, SZE SM

Multi-Level Resistive Al/Ga2O3/ITO Switching Devices with Interlayers of Graphene Oxide for Neuromorphic Computing

NANOMATERIALS

WANG LW, HUANG CW, LEE KJ, CHU SY, WANG YH