国家/地区 Japan（2）
关键词 SCHOTTKY BARRIER DIODE（2）
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出版时间
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Carrier density modulation and photocarrier transportation of graphene/InSb heterojunction middle-wavelength infrared photodetectors

OPTICAL ENGINEERING

FUKUSHIMA S, SHIMATANI M, OKUDA S, OGAWA S

Schottky Barrier Diode Characteristics of Graphene-GaN Heterojunction with Hexagonal Boron Nitride Interfacial Layer

PHYSICA STATUS SOLIDI AAPPLICATIONS MATERIALS SCIENCE

KALITA G, KOBAYASHI M, SHAARIN MD, MAHYAVANSHI RD, TANEMURA M