国家/地区 England（2）
关键词 SCHOTTKY BARRIER HEIGHT（2）
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Tunable Electronic Properties of Graphene/g-AlN Heterostructure: The Effect of Vacancy and Strain Engineering

NANOMATERIALS

LIU XF, ZHANG ZF, LUO ZJ, LV B, DING Z

High-Performance All 2D-Layered Tin Disulfide: Graphene Photodetecting Transistors with Thickness-Controlled Interface Dynamics

ACS APPLIED MATERIALS INTERFACES

CHANG RJ, TAN HJ, WANG XC, PORTER B, CHEN TX, SHENG YW, ZHOU YQ, HUANG HF, BHASKARAN H, WARNER JH