国家/地区 Korea（2）
关键词 SCHOTTKY BARRIER HEIGHT（4）
出版物
出版时间 2019（4）
机构 SUNGKYUNKWAN.（2）
作者

Tunable Electronic Properties of Graphene/g-AlN Heterostructure: The Effect of Vacancy and Strain Engineering

NANOMATERIALS

LIU XF, ZHANG ZF, LUO ZJ, LV B, DING Z

Tunable Electronic Properties and Giant Spontaneous Polarization in Graphene/Monolayer GeS van der Waals Heterostructure

PHYSICA STATUS SOLIDI BBASIC SOLID STATE PHYSICS

WANG QJ, TAN QH, LIU YK, QING C, FENG XB, YU DP

Room-temperature-operated fast and reversible vertical-heterostructure-diode gas sensor composed of reduced graphene oxide and AlGaN/GaN

SENSORS ACTUATORS BCHEMICAL

BAG A, MOON DB, PARK KH, CHO CY, LEE NE

Ultrahigh Gauge Factor in Graphene/MoS2 Heterojunction Field Effect Transistor with Variable Schottky Barrier

ACS NANO

LEE I, KANG WT, SHIN YS, KIM YR, WON UY, KIM K, DUONG DL, LEE K, HEO J, LEE YH, YU WJ