国家/地区 China（6）
关键词 SCHOTTKY BARRIER HEIGHT（6）
出版物
出版时间 2022（6）
机构
作者

Two-dimensional graphyne-graphene heterostructure for all-carbon transistors

JOURNAL OF PHYSICSCONDENSED MATTER

HUANG J, KANG J

Influence of contact interface on electric transport in in-plane graphene/MoSSe heterojunction

CHEMICAL PHYSICS

CHEN W, PAN JH, JING SC, LI W, BIAN BA, LIAO B, WANG GL

Effects of electric field on Schottky barrier in graphene and hexagonal boron phosphide heterostructures

PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES

WEI D, LI Y, FENG Z, MA YQ, TANG YA, DAI XQ

Improved barrier homogeneity in Pt/Al0.75Ga0.25N Schottky barrier diodes by graphene interlayer

JOURNAL OF PHYSICS DAPPLIED PHYSICS

RAN JX, HE R, WANG LL, LIU BZ, JI XL, SUN JY, WANG JX, LI JM, WEI TB

Modulation of Schottky barrier in XSi2N4/graphene (X = Mo and W) heterojunctions by biaxial strain

CHINESE PHYSICS B

LIANG Q, LUO XY, WANG YX, LIANG YC, XIE Q

First principle study on modulating of Schottky barrier at metal/4H-SiC interface by graphene intercalation

ACTA PHYSICA SINICA

DENG XL, JI XF, WANG DJ, HUANG LQ