国家/地区 Vietnam（7）
关键词 SCHOTTKY CONTACT（9）
出版物 JOURNAL OF ALLOYS C.（2） SUPERLATTICES MICRO.（2）
出版时间 2018（9）
机构 LE QUY DON T.（6）
作者 NGUYEN CV（7） HIEU NN（5） PHUC HV（5） HOI BD（3）
ILYASOV VV（3） PHAM KD（3） AMIN B（2）

SnS nanoribbon graphene mixed-dimensional heterostructures: Group VII passivation and quantum size effects

JOURNAL OF ALLOYS COMPOUNDS

XIA CX, FANG LZ, LI XP, XIONG WQ, GENG ZD

First principles study on the electronic properties and Schottky barrier of Graphene/InSe heterostructure

SUPERLATTICES MICROSTRUCTURES

PHAM KD, HIEU NN, ILYASOV VV, PHUC HV, HOI BD, FEDDI E, THUAN NV, NGUYEN CV

First principles study of the electronic properties and Schottky barrier in vertically stacked graphene on the Janus MoSeS under electric field

COMPUTATIONAL MATERIALS SCIENCE

PHAM KD, HIEU NN, PHUC HV, HOI BD, ILYSOV VV, AMIN B, NGUYEN CV

First principles calculations of the geometric structures and electronic properties of van der Waals heterostructure based on graphene, hexagonal boron nitride and molybdenum diselenide

DIAMOND RELATED MATERIALS

PHAM KD, NGUYEN CV

Gate-Controlled Graphene-Silicon Schottky Junction Photodetector

SMALL

CHANG KE, YOO TJ, KIM C, KIM YJ, LEE SK, KIM SY, HEO S, KWON MG, LEE BH

Van der Waals graphene/g-GaSe heterostructure: Tuning the electronic properties and Schottky barrier by interlayer coupling, biaxial strain, and electric gating

JOURNAL OF ALLOYS COMPOUNDS

PHUC HV, ILYASOV VV, HIEU NN, AMIN B, NGUYEN CV

Tuning the electronic properties and Schottky barrier height of the vertical graphene/MoS2 heterostructure by an electric gating

SUPERLATTICES MICROSTRUCTURES

NGUYEN CV

Electric-field tunable electronic properties and Schottky contact of graphene/phosphorene heterostructure

VACUUM

PHUC HV, ILYASOV VV, HIEU NN, NGUYEN CV

First principle study on the electronic properties and Schottky contact of graphene adsorbed on MoS2 monolayer under applied out-plane strain

SURFACE SCIENCE

PHUC HV, HIEU NN, HOI BD, PHUONG LTT, NGUYEN CV