国家/地区 Usa（2）
关键词 SILICON CARBIDE（3）
出版物
出版时间
机构 GEORGIA INST.（2）
作者 BERGER C（3）

Record Maximum Oscillation Frequency in C-Face Epitaxial Graphene Transistors

NANO LETTERS

GUO ZL, DONG R, CHAKRABORTY PS, LOURENCO N, PALMER J, HU YK, RUAN M, HANKINSON J, KUNC J, CRESSLER JD, BERGER C, DE HEER WA

Electronic properties of epitaxial graphene

INTERNATIONAL JOURNAL OF NANOTECHNOLOGY

BERGER C, VEUILLEN JY, MAGAUD L, MALLET P, OLEVANO V, ORLITA M, PLOCHOCKA P, FAUGERAS C, MARTINEZ G, POTEMSKI M, NAUD C, LEVY LP, MAYOU D

Scalable control of graphene growth on 4H-SiC C-face using decomposing silicon nitride masks

JOURNAL OF PHYSICS DAPPLIED PHYSICS

PUYBARET R, HANKINSON J, PALMER J, BOUVIER C, OUGAZZADEN A, VOSS PL, BERGER C, DE HEER WA