国家/地区 China（2）
关键词 SILICON CARBIDE（2）
出版物
出版时间
机构
作者 JIA YP（2）

Influence of defects in SiC (0001) on epitaxial graphene

CHINESE PHYSICS B

GUO Y, GUO LW, LU W, HUANG J, JIA YP, SUN W, LI ZL, WANG YF

Improved performance of SiC radiation detectors due to optimized ohmic contact electrode by graphene insertion

DIAMOND RELATED MATERIALS

JIA YP, SUN XJ, SHI ZM, JIANG K, WU T, LIANG HW, CUI XZ, LU W, LI DB