国家/地区 Poland（2） Singapore（2）
关键词 SILICON CARBIDE（9）
出版物 SURFACE SCIENCE（3）
出版时间 2011（9）
机构
作者 STRUPINSKI W（2）

Graphene-based pressure nano-sensors

JOURNAL OF MOLECULAR MODELING

SORKIN V, ZHANG YW

Rb and Cs deposition on epitaxial graphene grown on 6H-SiC(0001)

SURFACE SCIENCE

WATCHARINYANON S, VIROJANADARA C, JOHANSSON LI

Quasi-Free-Standing Epitaxial Graphene on SiC (0001) by Fluorine Intercalation from a Molecular Source

ACS NANO

WONG SL, HUANG H, WANG YZ, CAO L, QI DC, SANTOSO I, CHEN W, WEE ATS

Structural analysis of PTCDA monolayers on epitaxial graphene with ultra-high vacuum scanning tunneling microscopy and high-resolution X-ray reflectivity

SURFACE SCIENCE

EMERY JD, WANG QH, ZARROUATI M, FENTER P, HERSAM MC, BEDZYK MJ

Stability and charge transfer at the interface between SiC(0001) and epitaxial graphene

MICROELECTRONIC ENGINEERING

SCLAUZERO G, PASQUARELLO A

The Electronic Properties of SiC Graphene-Like: Doped and No-Doped Case

JOURNAL OF COMPUTATIONAL THEORETICAL NANOSCIENCE

ANOTA EC, COCOLETZI HH, HERNANDEZ AB, RAMIREZ JFS

Microwave Conductivity of Very Thin Graphene and Metal Films

JOURNAL OF NANOSCIENCE NANOTECHNOLOGY

KRUPKA J, STRUPINSKI W, KWIETNIEWSKI N

Epitaxial graphene perfection vs. SiC substrate quality

CENTRAL EUROPEAN JOURNAL OF PHYSICS

TEKLINSKA D, KOSCIEWICZ K, GRODECKI K, TOKARCZYK M, KOWALSKI G, STRUPINSKI W, OLSZYNA A, BARANOWSKI J

Nano-structures developing at the graphene/silicon carbide interface

SURFACE SCIENCE

VIZZINI S, ENRIQUEZ H, CHIANG S, OUGHADDOU H, SOUKIASSIAN P