国家/地区
关键词 TIGHTBINDING MODEL（5）
出版物
出版时间 2022（5）
机构
作者

Metal-semiconductor transition in F-graphene

MATERIALS TODAY COMMUNICATIONS

JALILVAND S, MOUSAVI H, IRANI M

On electron propagation in triangular graphene quantum dots

JOURNAL OF PHYSICS AMATHEMATICAL THEORETICAL

HRIVNAK J, MOTLOCHOVA L

Universal features of point defect spectrum in graphene

PHYSICS LETTERS A

MISHRA A, SINGH VA

Atomic real-space perspective of light-field-driven currents in graphene

NEW JOURNAL OF PHYSICS

MORIMOTO Y, SHINOHARA Y, ISHIKAWA KL, HOMMELHOFF P

Quantum interference of electrons through electric-field-induced edge states in stacked graphene nanoribbons

PHYSICA SCRIPTA

NGUYEN MC, NGUYEN HV