国家/地区 Germany（5）
关键词 TMD（5）
出版物
出版时间 2023（2）
机构
作者 KATARIA S（2） LEMME MC（2）

Electron Transport across Vertical Silicon/MoS2/Graphene Heterostructures: Towards Efficient Emitter Diodes for Graphene Base Hot Electron Transistors

ACS APPLIED MATERIALS INTERFACES

BELETE M, ENGSTROM O, VAZIRI S, LIPPERT G, LUKOSIUS M, KATARIA S, LEMME MC

Graphene and Two-Dimensional Materials for Optoelectronic Applications

ELECTRONICS

BABLICH A, KATARIA S, LEMME MC

Proximity-enhanced valley Zeeman splitting at the WS2/graphene interface

2D MATERIALS

FARIA PE, NAIMER T, MCCREARY KM, JONKER BT, FINLEY JJ, CROOKER SA, FABIAN J, STIER AV

Ultrafast Charge Separation in Bilayer WS2/Graphene Heterostructure Revealed by Time- and Angle-Resolved Photoemission Spectroscopy

FRONTIERS IN PHYSICS

KRAUSE R, CHAVEZCERVANTES M, AESCHLIMANN S, FORTI S, FABBRI F, ROSSI A, COLETTI C, CACHO C, ZHANG Y, MAJCHRZAK PE, CHAPMAN RT, SPRINGATE E, GIERZ I

Unraveling van der Waals epitaxy: A real-time in-situ study of MoSe2 growth on graphene/Ru(0001)

ULTRAMICROSCOPY

BUSS L, BRAUD N, EWERT M, JUGOVAC M, MENTES TO, LOCATELLI A, FALTA J, FLEGE JI