国家/地区 Korea（3）
关键词 TOPOLOGICAL DEFECT（3）
出版物
出版时间
机构
作者 LEE Z（2）

Effects of dry oxidation treatments on monolayer graphene

2D MATERIALS

RYU GH, LEE J, KANG D, JO HJ, SHIN HS, LEE Z

The Origin of Improved Electrical Double-Layer Capacitance by Inclusion of Topological Defects and Dopants in Graphene for Supercapacitors

ANGEWANDTE CHEMIEINTERNATIONAL EDITION

CHEN JF, HAN YL, KONG XH, DENG XZ, PARK HJ, GUO YL, JIN S, QI ZK, LEE Z, QIAO ZH, RUOFF RS, JI HX

Helical states around a mass-inverted quantum dot in graphene

CURRENT APPLIED PHYSICS

MYOUNG N