国家/地区
关键词 TOPOLOGICAL DEFECT（2）
出版物
出版时间 2016（2）
机构
作者

The Origin of Improved Electrical Double-Layer Capacitance by Inclusion of Topological Defects and Dopants in Graphene for Supercapacitors

ANGEWANDTE CHEMIEINTERNATIONAL EDITION

CHEN JF, HAN YL, KONG XH, DENG XZ, PARK HJ, GUO YL, JIN S, QI ZK, LEE Z, QIAO ZH, RUOFF RS, JI HX

Two-dimensional quantum ring in a graphene layer in the presence of a Aharonov-Bohm flux

ANNALS OF PHYSICS

NETO JA, BUENO MJ, FURTADO C