国家/地区 China（2）
关键词 TRANSFER CHARACTERISTIC（2）
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Effects of vacancy defects on graphene nanoribbon field effect transistor

MICRO NANO LETTERS

CHANG S, ZHANG YJ, HUANG QJ, WANG H, WANG GF

Obvious difference between protons and electrons irradiation on the performance of graphene devices

INTERNATIONAL JOURNAL OF MODERN PHYSICS B

CUI NY, LIU YM, JIANG HF, GUO JL