国家/地区 China（2） Korea（2）
关键词 TRANSITION METAL DICHALCOGENIDE（8）
出版物 ADVANCED MATERIALS（2）
出版时间 2019（8）
机构
作者

Nonlinear photoresponse of metallic graphene-like VSe2 ultrathin nanosheets for pulse laser generation

SCIENCE CHINAINFORMATION SCIENCES

WANG T, SHI XY, WANG J, XU YJ, CHEN J, DONG Z, JIANG M, MA PF, SU RT, MA YX, WU J, ZHANG K, ZHOU P

Graphene surface contacts of tin disulfide transistors for switching performance improvement and contact resistance reduction

NANOTECHNOLOGY

SUL O, BANG J, YEOM SO, RYU G, JOO HB, KIM SJ, YANG H, LEE J, LEE G, CHOI E, LEE SB

Transition Metal Dichalcogenide Anchored in 3D Nickel Framework with Graphene Support for Efficient Electrocatalytic Hydrogen Evolution

ADVANCED SUSTAINABLE SYSTEMS

NARASIMMAN R, WALDIYA M, KARTHIK E, MUKHOPADHYAY I, RAY A

Directional Motion of a Graphene Sheet on Graded MoS2-WSe2 Lateral Heterostructures

JOURNAL OF APPLIED MECHANICSTRANSACTIONS OF THE ASME

HAN GR, CHANG TC, JIANG JW

WSe2 homojunctions and quantum dots created by patterned hydrogenation of epitaxial graphene substrates

2D MATERIALS

PAN Y, FOLSCH S, LIN YC, JARIWALA B, ROBINSON JA, NIE YF, CHO K, FEENSTRA RM

Nonvolatile Memories Based on Graphene and Related 2D Materials

ADVANCED MATERIALS

BERTOLAZZI S, BONDAVALLI P, ROCHE S, SAN T, CHOI SY, COLOMBO L, BONACCORSO F, SAMORI P

Growth of Nanocrystalline MoSe2 Monolayers on Epitaxial Graphene from Amorphous Precursors

PHYSICA STATUS SOLIDI BBASIC SOLID STATE PHYSICS

GOHLER F, HADLAND EC, SCHMIDT C, ZAHN DRT, SPECK F, JOHNSON DC, SEYLLER T

Lowering the Schottky Barrier Height by Graphene/Ag Electrodes for High-Mobility MoS2 Field-Effect Transistors

ADVANCED MATERIALS

CHEE SS, SEO D, KIM H, JANG H, LEE S, MOON SP, LEE KH, KIM SW, CHOI H, HAM MH