国家/地区 China（3）
关键词 TUNNELING（3）
出版物
出版时间
机构 SOOCHOW UNIV（2）
作者 MAO LF（3）

Current-voltage Characteristics of Graphene Nanoribbon Schottky Diodes

IETE JOURNAL OF RESEARCH

MAO LF, WANG ZO, ZHANG LJ, JI AM, ZHU CY, YANG JF

The gate leakage current in graphene field-effect transistor

IEEE ELECTRON DEVICE LETTERS

MAO LF, LI XJ, WANG ZO, WANG JY

Effects of Energy Relaxation via Quantum Coupling Among Three-Dimensional Motion on the Tunneling Current of Graphene Field-Effect Transistors

NANOSCALE RESEARCH LETTERS

MAO LF, NING HS, LI XJ