国家/地区 China（4）
关键词 VALLEY HALL EFFECT（4）
出版物 PHYSICS LETTERS A（2）
出版时间 2017（2）
机构
作者

Valley Hall effect and Nernst effect in strain engineered graphene

PHYSICS LETTERS A

NIU ZP, YAO JM

Nonlocal resistance in multi-terminal graphene system

ACTA PHYSICA SINICA

WANG ZB, JIANG H, XIE XC

Structure and electronic properties of graphene on ferroelectric LiNbO3 surface

PHYSICS LETTERS A

DING J, WEN LW, LI HD, ZHANG Y

Gate-tunable localization and delocalization of perfect valley-related topological edge states in zigzag graphene nanoribbons

SURFACES INTERFACES

LIU ZF, WU QP, XIAO XB