国家/地区
关键词 WSE2（2）
出版物
出版时间
机构
作者 TANIGUCHI T（2）

Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene-WSe2 Heterostructures

NANO LETTERS

BURG GW, PRASAD N, FALLAHAZAD B, VALSARAJ A, KIM K, TANIGUCHI T, WATANABE K, WANG QX, KIM MJ, REGISTER LF, TUTUC E

UV light controlled optoelectronic memory based on WSe2 and hBN encapsulated graphene heterostructures

JOURNAL OF ALLOYS COMPOUNDS

KIM M, LEE Y, KUMAR S, KANG D, LEE S, NGUYEN V, NGUYEN DC, JAFFERY SHA, JUNG JW, TANIGUCHI T, WATANABE K, SEO Y