国家/地区 Algeria（3）
关键词 NEGF（3）
出版物
出版时间
机构
作者 TAMERSIT K（2）

Performance enhancement of an ultra-scaled double-gate graphene nanoribbon tunnel field-effect transistor using channel doping engineering: Quantum simulation study

AEUINTERNATIONAL JOURNAL OF ELECTRONICS COMMUNICATIONS

TAMERSIT K

Boosting the performance of a nanoscale graphene nanoribbon field-effect transistor using graded gate engineering

JOURNAL OF COMPUTATIONAL ELECTRONICS

TAMERSIT K, DJEFFAL F

Significant improvement of infrared graphene nanoribbon phototransistor performance: A quantum simulation study

SENSORS ACTUATORS APHYSICAL

ABDI MA, BENCHERIF H, BENDIB T, MEDDOUR F, CHAHDI M