国家/地区 Australia（4）
关键词 EPITAXIAL GROWTH（2） GRAPHENE（2）
出版物
出版时间 2016（4）
机构 GRIFFITH UNI.（2） QUEENSLAND U.（2）
作者 IACOPI F（4）

Graphene growth on silicon carbide: A review

PHYSICA STATUS SOLIDI AAPPLICATIONS MATERIALS SCIENCE

MISHRA N, BOECKL J, MOTTA N, IACOPI F

Effect of substrate polishing on the growth of graphene on 3C-SiC(111)/Si(111) by high temperature annealing

NANOTECHNOLOGY

GUPTA B, DI BERNARDO I, MONDELLI P, DELLA PIA A, BETTI MG, IACOPI F, MARIANI C, MOTTA N

All-solid-state supercapacitors on silicon using graphene from silicon carbide

APPLIED PHYSICS LETTERS

WANG B, AHMED M, WOOD B, IACOPI F

Time evolution of graphene growth on SiC as a function of annealing temperature

CARBON

ZAROTTI F, GUPTA B, IACOPI F, SGARLATA A, TOMELLINI M, MOTTA N