国家/地区 Brazil（2）
关键词
出版物
出版时间 2012（2）
机构
作者 MALARD LM（2）

Characterizing intrinsic charges in top gated bilayer graphene device by Raman spectroscopy

CARBON

MAFRA DL, GAVA P, MALARD LM, BORGES RS, SILVA GG, LEON JA, PLENTZ F, MAURI F, PIMENTA MA

The use of a Ga+ focused ion beam to modify graphene for device applications

NANOTECHNOLOGY

ARCHANJO BS, BARBOZA APM, NEVES BRA, MALARD LM, FERREIRA EHM, BRANT JC, ALVES ES, PLENTZ F, CAROZO V, FRAGNEAUD B, MACIEL IO, ALMEIDA CM, JORIO A, ACHETE CA