国家/地区 China（6）
关键词 FIELDEFFECT TUNNELI.（2）
出版物
出版时间 2022（2）
机构
作者 BAI ZQ（6）

Selective etching in graphene-MoS2 heterostructures for fabricating graphene-contacted MoS2 transistors

AIP ADVANCES

SUN ZL, PENG G, BAI ZQ, ZHANG XZ, WEI YH, DENG CY, ZHANG Y, ZHU MJ, QIN SQ, LI Z, LUO W

Interactions between Th(IV) and graphene oxide: experimental and density functional theoretical investigations

RSC ADVANCES

BAI ZQ, LI ZJ, WANG CZ, YUAN LY, LIU ZR, ZHANG J, ZHENG LR, ZHAO YL, CHAI ZF, SHI WQ

Highly Tunable Carrier Tunneling in Vertical Graphene-WS2-Graphene van der Waals Heterostructures

ACS NANO

BAI ZQ, XIAO Y, LUO Q, LI MM, PENG G, ZHU ZH, LUO F, ZHU MJ, QIN SQ, NOVOSELOV K

Controlling Tunneling Characteristics via Bias Voltage in Bilayer Graphene/WS2/Metal Heterojunctions

NANOMATERIALS

BAI ZQ, ZHANG S, XIAO Y, LI MM, LUO F, LI J, QIN SQ, PENG G

On-chip torsion balances with femtonewton force resolution at room temperature enabled by carbon nanotube and graphene

SCIENCE ADVANCES

CONG L, YUAN Z, BAI ZQ, WANG XH, ZHAO W, GAO XY, HU XP, LIU P, GUO WL, LI QQ, FAN SS, JIANG KL

Enhanced nitrogen electroreduction performance by the reorganization of local coordination environment of supported single atom on N(O)-dual-doped graphene

NANO RESEARCH

BAI ZQ, ZHANG WH, LIU YF