国家/地区 | China(3) |
关键词 | |
出版物 | |
出版时间 | 2016(3) |
机构 | SHANGHAI JIA.(2) |
作者 | HU GX(3) |
Quasi-ballistic transport model for top- and back-gated graphene nanoribbon field-effect transistors
JAPANESE JOURNAL OF APPLIED PHYSICS
HU SY, HU GX, WANG LL, LIU R, ZHENG LR
INDUSTRIAL ENGINEERING CHEMISTRY RESEARCH
YI LX, HU GX, LI H
RSC ADVANCES
GAO HY, HU GX