国家/地区 China（19）
关键词 GRAPHENE（6） CONTACT RESISTANCE（2） PTYPE DOPING（2）
SUPERCAPACITOR（2）
出版物 ADVANCED ELECTRONIC.（3） NANOTECHNOLOGY（3）
出版时间 2016（4） 2021（4） 2019（3） 2022（3） 2018（2） 2020（2）
机构 CHINESE ACAD.（9）
作者 HUANG XN（19）

Controllable p-to-n Type Conductance Transition in Top-Gated Graphene Field Effect Transistor by Interface Trap Engineering

ADVANCED ELECTRONIC MATERIALS

PENG SG, JIN Z, YAO Y, HUANG XN, ZHANG DY, NIU JB, SHI JY, ZHANG YH, YU GH

A composite with a gradient distribution of graphene and its anisotropic electromagnetic reflection

RSC ADVANCES

ZHANG DY, JIN Z, SHI JY, PENG SG, HUANG XN, YAO Y, LI YK, DING WC, WANG DH

A uniform stable P-type graphene doping method with a gold etching process

NANOTECHNOLOGY

YAO Y, PENG SA, HUANG XN, ZHANG DY, SHI JY, JIN Z

A dual-wavelength Q-switched fiber laser based on reduced graphene oxides

LASER PHYSICS

SU YL, HUANG XN, HU H, WEN Y, XIE XP, SI JH, WANG YS, ZHAO W

Reconfigurable Artificial Synapses between Excitatory and Inhibitory Modes Based on Single-Gate Graphene Transistors

ADVANCED ELECTRONIC MATERIALS

YAO Y, HUANG XN, PENG OG, ZHANG DY, SHI JY, YU GH, LIU Q, JIN Z

How Do Contact and Channel Contribute to the Dirac Points in Graphene Field-Effect Transistors?

ADVANCED ELECTRONIC MATERIALS

PENG SA, JIN Z, ZHANG DY, SHI JY, NIU JB, HUANG XN, YAO Y, ZHANG YH, YU GH

Lanthanide-doped upconversion nanoparticles complexed with nano-oxide graphene used for upconversion fluorescence imaging and photothermal therapy

BIOMATERIALS SCIENCE

LI P, YAN Y, CHEN BL, ZHANG P, WANG SL, ZHOU J, FAN HM, WANG YG, HUANG XN

Intrinsic carrier mobility extraction based on a new quasi-analytical model for graphene field-effect transistors

JOURNAL OF PHYSICS DAPPLIED PHYSICS

WANG SQ, JIN Z, MUHAMMAD A, PENG SG, HUANG XN, ZHANG DY, SHI JY

One-pot Synthesized Co/Co3O4-N-Graphene Composite as Electrocatalyst for Oxygen Reduction Reaction and Oxygen Evolution Reaction

ELECTROANALYSIS

HE BC, CHEN XX, LU JM, YAO SD, WEI J, ZHAO Q, JING DS, HUANG XN, WANG T

Abnormal Dirac point shift in graphene field-effect transistors

MATERIALS RESEARCH EXPRESS

WANG SQ, JIN Z, HUANG XN, PENG SG, ZHANG DY, SHI JY