国家/地区 China（2）
关键词
出版物
出版时间 2018（2）
机构 CHINESE ACAD.（2）
作者 NIU JB（2）

How Do Contact and Channel Contribute to the Dirac Points in Graphene Field-Effect Transistors?

ADVANCED ELECTRONIC MATERIALS

PENG SA, JIN Z, ZHANG DY, SHI JY, NIU JB, HUANG XN, YAO Y, ZHANG YH, YU GH

Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects

ADVANCED MATERIALS

ZHAO XL, MA J, XIAO XH, LIU Q, SHAO L, CHEN D, LIU S, NIU JB, ZHANG XM, WANG Y, CAO RR, WANG W, DI ZF, LV HB, LONG SB, LIU M