国家/地区 China（7）
关键词 GRAPHENE（3）
出版物 APPLIED PHYSICS LET.（2）
出版时间 2015（2） 2016（2）
机构 CHINESE ACAD SCI（7）
作者 PENG SA（7）

A uniform stable P-type graphene doping method with a gold etching process

NANOTECHNOLOGY

YAO Y, PENG SA, HUANG XN, ZHANG DY, SHI JY, JIN Z

How Do Contact and Channel Contribute to the Dirac Points in Graphene Field-Effect Transistors?

ADVANCED ELECTRONIC MATERIALS

PENG SA, JIN Z, ZHANG DY, SHI JY, NIU JB, HUANG XN, YAO Y, ZHANG YH, YU GH

Heavily p-type doped chemical vapor deposition graphene field-effect transistor with current saturation

APPLIED PHYSICS LETTERS

PENG SA, JIN Z, MA P, YU GH, SHI JY, ZHANG DY, CHEN J, LIU XY, YE TC

The two timescales in the charge trapping mechanism for the hysteresis behavior in graphene field effect transistors

JOURNAL OF MATERIALS SCIENCEMATERIALS IN ELECTRONICS

MAO DC, WANG SQ, PENG SA, ZHANG DY, SHI JY, HUANG XN, ASIF M, JIN Z

Depositing aluminum as sacrificial metal to reduce metal-graphene contact resistance

CHINESE PHYSICS B

MAO DC, JIN Z, WANG SQ, ZHANG DY, SHI JY, PENG SA, WANG XY

The sheet resistance of graphene under contact and its effect on the derived specific contact resistivity

CARBON

PENG SA, JIN Z, MA P, ZHANG DY, SHI JY, NIU JB, WANG XY, WANG SQ, LI M, LIU XY, YE TC, ZHANG YH, CHEN ZY, YU GH

Effect of source-gate spacing on direct current and radio frequency characteristic of graphene field effect transistor

APPLIED PHYSICS LETTERS

PENG SA, JIN Z, PENGMA, ZHANG DY, SHI JY, WANG XY, WANG SQ, MEILI, LIU XY, YU GH