国家/地区 China（6）
关键词 GRAPHENE（6）
出版物 NANOTECHNOLOGY（3） ADVANCED ELECTRONIC.（2）
出版时间 2019（2） 2021（2）
机构 CHINESE ACAD.（3）
作者 HUANG XN（6）

A uniform stable P-type graphene doping method with a gold etching process

NANOTECHNOLOGY

YAO Y, PENG SA, HUANG XN, ZHANG DY, SHI JY, JIN Z

Reconfigurable Artificial Synapses between Excitatory and Inhibitory Modes Based on Single-Gate Graphene Transistors

ADVANCED ELECTRONIC MATERIALS

YAO Y, HUANG XN, PENG OG, ZHANG DY, SHI JY, YU GH, LIU Q, JIN Z

How Do Contact and Channel Contribute to the Dirac Points in Graphene Field-Effect Transistors?

ADVANCED ELECTRONIC MATERIALS

PENG SA, JIN Z, ZHANG DY, SHI JY, NIU JB, HUANG XN, YAO Y, ZHANG YH, YU GH

A graphene-based THz metasurface sensor with air-spaced structure

FRONTIERS IN PHYSICS

HU H, QI B, ZHAO YF, ZHANG XJ, WANG Y, HUANG XN

Reducing metal/graphene contact resistance via N, N-dimethylacetamide-assisted clean fabrication process

NANOTECHNOLOGY

ZHU CY, PENG SA, ZHANG XR, YAO Y, HUANG XN, YAN YP, ZHANG DY, SHI JY, JIN Z

Stable p-type chemical doping of graphene with reduced contact resistance by single-layer perfluorinated polymeric sulfonic acid

NANOTECHNOLOGY

ZHANG XR, YAO Y, PENG SA, ZHU CY, HUANG XN, YAN YP, ZHANG DY, SHI JY, JIN Z