国家/地区 China（2）
关键词 GRAPHENE TRANSISTOR（2）
出版物
出版时间
机构
作者 NIU JB（2）

Controllable p-to-n Type Conductance Transition in Top-Gated Graphene Field Effect Transistor by Interface Trap Engineering

ADVANCED ELECTRONIC MATERIALS

PENG SG, JIN Z, YAO Y, HUANG XN, ZHANG DY, NIU JB, SHI JY, ZHANG YH, YU GH

The Effect of Metal Contact Doping on the Scaled Graphene Field Effect Transistor

ADVANCED ENGINEERING MATERIALS

PENG OG, JIN Z, ZHANG DY, SHI JY, NIU JB, ZHU CY, ZHANG YH, YU GH