国家/地区 China（4）
关键词
出版物 CARBON（3）
出版时间 2014（4）
机构 TSINGHUA UNI.（3）
作者 FENG TT（4）

Electron-doping of graphene-based devices by hydrazine

JOURNAL OF APPLIED PHYSICS

FENG TT, XIE D, WANG DX, WEN L, WU MQ

Back-gate graphene field-effect transistors with double conductance minima

CARBON

FENG TT, XIE D, XU JL, ZHAO HM, LI G, REN TL, ZHU HG

Temperature and gate voltage dependent electrical properties of graphene field-effect transistors

CARBON

FENG TT, XIE D, LI G, XU JL, ZHAO HM, REN TL, ZHU HW

Tunable transport characteristics of p-type graphene field-effect transistors by poly (ethylene imine) overlayer

CARBON

FENG TT, XIE D, ZHAO HM, LI G, XU JL, REN TL, ZHU HW