国家/地区 China（7）
关键词 SCHOTTKY BARRIER（7）
出版物 ACS APPLIED ELECTRO.（2） IEEE TRANSACTIONS O.（2）
出版时间 2023（7）
机构
作者 DUAN R（2） GUO HT（2） LI PK（2） QI WH（2）
RU GL（2）

Analysis of Near-Field Thermophotovoltaic Devices Using Graphene-Germanium Schottky Cell

IEEE TRANSACTIONS ON ELECTRON DEVICES

YANG ZM, SONG JM, LEE BJ

Performance Improvement of MoS2-Based MOSFETs With Graphene Quantum Dots Pretreatment Technology

IEEE TRANSACTIONS ON ELECTRON DEVICES

YANG K, LIU HX, WANG SL, CHONG C, HAN T

High-performance self-powered ultraviolet photodetector in SnO2 microwire/p-GaN heterojunction using graphene as charge collection medium

JOURNAL OF MATERIALS SCIENCE TECHNOLOGY

XU T, JIANG MM, WAN P, LIU Y, KAN CX, SHI DN

Excellent Optoelectronic Properties and Low Contact Resistance of Graphene/MoS2 Heterostructure Optoelectronic Devices: First- Principles Calculation and Experimental Verification

ACS APPLIED ELECTRONIC MATERIALS

LI PK, GUO HT, DUAN R, RU GL, QI WH

Excellent Optoelectronic Properties and Low Contact Resistance of Graphene/MoS2 Heterostructure Optoelectronic Devices: First- Principles Calculation and Experimental Verification

ACS APPLIED ELECTRONIC MATERIALS

LI PK, GUO HT, DUAN R, RU GL, QI WH

Graphene/MoSi2X4: A class of van der Waals heterojunctions with unique mechanical and optical properties and controllable electrical contacts

APPLIED SURFACE SCIENCE

LI Z, HAN JN, CAO SG, ZHANG ZH

Cooperative effect of strain and electric field on Schottky barriers in van der Waals heterostructure of graphene and hydrogenated phosphorus carbide

PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES

LI L, ZHANG LT, LAN Y, XIA LX, HUANG T, HUANG GF, HU WY, HUANG WQ