国家/地区 China（9）
关键词 GRAPHENE（3）
出版物 ADVANCED ELECTRONIC.（3）
出版时间 2016（3） 2019（3） 2020（2）
机构 CHINESE ACAD SCI（9）
作者 HUANG XN（9）

Controllable p-to-n Type Conductance Transition in Top-Gated Graphene Field Effect Transistor by Interface Trap Engineering

ADVANCED ELECTRONIC MATERIALS

PENG SG, JIN Z, YAO Y, HUANG XN, ZHANG DY, NIU JB, SHI JY, ZHANG YH, YU GH

A composite with a gradient distribution of graphene and its anisotropic electromagnetic reflection

RSC ADVANCES

ZHANG DY, JIN Z, SHI JY, PENG SG, HUANG XN, YAO Y, LI YK, DING WC, WANG DH

A uniform stable P-type graphene doping method with a gold etching process

NANOTECHNOLOGY

YAO Y, PENG SA, HUANG XN, ZHANG DY, SHI JY, JIN Z

A dual-wavelength Q-switched fiber laser based on reduced graphene oxides

LASER PHYSICS

SU YL, HUANG XN, HU H, WEN Y, XIE XP, SI JH, WANG YS, ZHAO W

Reconfigurable Artificial Synapses between Excitatory and Inhibitory Modes Based on Single-Gate Graphene Transistors

ADVANCED ELECTRONIC MATERIALS

YAO Y, HUANG XN, PENG OG, ZHANG DY, SHI JY, YU GH, LIU Q, JIN Z

How Do Contact and Channel Contribute to the Dirac Points in Graphene Field-Effect Transistors?

ADVANCED ELECTRONIC MATERIALS

PENG SA, JIN Z, ZHANG DY, SHI JY, NIU JB, HUANG XN, YAO Y, ZHANG YH, YU GH

Intrinsic carrier mobility extraction based on a new quasi-analytical model for graphene field-effect transistors

JOURNAL OF PHYSICS DAPPLIED PHYSICS

WANG SQ, JIN Z, MUHAMMAD A, PENG SG, HUANG XN, ZHANG DY, SHI JY

Abnormal Dirac point shift in graphene field-effect transistors

MATERIALS RESEARCH EXPRESS

WANG SQ, JIN Z, HUANG XN, PENG SG, ZHANG DY, SHI JY

The two timescales in the charge trapping mechanism for the hysteresis behavior in graphene field effect transistors

JOURNAL OF MATERIALS SCIENCEMATERIALS IN ELECTRONICS

MAO DC, WANG SQ, PENG SA, ZHANG DY, SHI JY, HUANG XN, ASIF M, JIN Z